型号:

FDS3572

RoHS:无铅 / 符合
制造商:Fairchild Semiconductor描述:MOSFET N-CH 80V 8.9A 8SOIC
详细参数
数值
产品分类 分离式半导体产品 >> FET - 单
FDS3572 PDF
产品培训模块 High Voltage Switches for Power Processing
产品变化通告 Mold Compound Change 12/Dec/2007
标准包装 1
系列 PowerTrench®
FET 型 MOSFET N 通道,金属氧化物
FET 特点 逻辑电平门
漏极至源极电压(Vdss) 80V
电流 - 连续漏极(Id) @ 25° C 8.9A
开态Rds(最大)@ Id, Vgs @ 25° C 16 毫欧 @ 8.9A,10V
Id 时的 Vgs(th)(最大) 4V @ 250µA
闸电荷(Qg) @ Vgs 41nC @ 10V
输入电容 (Ciss) @ Vds 1990pF @ 25V
功率 - 最大 2.5W
安装类型 表面贴装
封装/外壳 8-SOIC(0.154",3.90mm 宽)
供应商设备封装 8-SOICN
包装 标准包装
其它名称 FDS3572DKR
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